| PART |
Description |
Maker |
| SBE818 |
30V, 2.0A Rectifi er
|
Sanyo Semicon Device
|
| APT100DL60B APT100DL60BG APT100DL60S APT100DL60SG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| CPD34X CPD31X |
10A, 60V Schottky Rectifi er Die
|
Central Semiconductor Corp
Central Semiconductor C...
|
| CHF5KP30A CHF5KP50A CHF5KP110CA MSC0997 CHF5KP65A |
Patented Flip Chip Series
FLIP CHIP TVS DIODES
From old datasheet system
Transient Voltage Suppressor 瞬态电压抑制器
5000 W, BIDIRECTIONAL, SILICON, TVS DIODE FLIP CHIP-2
|
MICROSEMI[Microsemi Corporation]
Atmel, Corp.
Microsemi, Corp.
Vishay Intertechnology, Inc.
|
| P0406FC12C P0406FC3.3C P0406FC08C P0406FC05C P0406 |
FLIP CHIP ARRAY
250 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE ROHS COMPLIANT, 0406, FLIP CHIP-6
|
List of Unclassifed Manufacturers
ETC[ETC]
PROTEC[Protek Devices]
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| CP305 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor NPN - High Current Transistor Chip
|
CENTRAL[Central Semiconductor Corp]
|
| CP705 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor PNP - High Current Transistor Chip
|
Central Semiconductor Corp
|
| TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
